Thin Film Technology

Thin film technology is the fastest growing on the market because it is less costly to manufacturer and better employed for various applications. TFPV modules require less than 1% of the semiconductor material to achieve the same power output as a c-Si PV device; hence, no significant constraints on the raw material supply that severely affects monolithic c-Si PV manufacturers. In addition, TFPV cells can be fabricated in an economically effective way on large sheets of glass, from 1.1 x 1.25 meters to 2.2×2.6 meters. Other forms are a roll-to-roll process on the flexible metal foils or on plastic films. Due to economy of scale and using materials more efficiently, both large glass and roll-to-roll foil have lower costs per Watt than monolithic Silicon modules.

Currently, a number of competing TFPV technologies exist that differ mostly by the type of active PV layer. At this point, the most established and proven technologies include:

• Amorphous Silicon (a-Si) in a single junction, frequently used in combination with micro-crystalline Silicon (µc-Si) in tandem junction. Commercial Efficiency between 5-9%
• Copper Indium Gallium DiSelenide (CIGS). Commercial Efficiency between 5-11%
• Cadmium Telluride (CdTe).Commercial Efficiency between 9-10%

ASP can provide your company with a thin film turn-key production line.  Having evaluated the best innovative manufacturing and production methods and having secured the patents for new technology and processes, your facility is just a phone call away from manufacturing thin film panels.

ASP’s Thin Film Panel Production line consists of:

1. Vacuum Deposition: There are two major types of technology used for fabrication of the thin film photovoltaic cells: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Physical Vapor Deposition (PVD).
2. Glass substate Laser Cutting Technology: Laser Glass Cutting is based on our licensed patented laser glass separation technology. The glass is cut up to 3 times faster with edges up to five times stronger than conventional scribing and breaking. ASP’s licensed “Zero Width Laser Technology” ensures glass has no edge micro cracks, increases production yields and prolongs panel life time in harsh environments with high temperature fluctuations. “Zero Width Laser Technology” was used for Flat Panel Display Technology and  is literally on the cutting edge for photovoltaics.
3. Efficiency Enhancer (e2): Using an oven-less laser annealing process (patent pending), the light transmission efficiency and conductivity of TCO layers are increased by up to 35%. Additionally, the process improves light trapping efficiency and prevents de-lamination. The e2 process increases the overall panel efficiency and extends its life expectancy.
4. Integrated Interconnect (i2): The i2 process (patent pending) simplifies the method of creating the thin film monolithical integrated electrical interconnect.  This method reduces contamination during laser scribing, increases cell efficiency, improves yield and throughput.
5. Laser Comb: The Laser Comb™ generates multiple laser beams that roll through thin film layers creating plurality of scribe lines (up to 120 in a single pass) decreasing process time and increasing panel throughput.
6. Laser Edge Isolation: This tool quickly isolates the electrodes from the edge and prevents “jumping offs”.  Laser Edge Isolation homogenize the modules and reduce shunt currents without causing any damage to the substrate.
7. Laser Junction Box Cut: Using recently developed laser technology an access hole is made in the glass to allow the electrical connection of the junction box. Our technology prevents microcracks associated with conventional cutting tools and increases the strength and longevity of the glass.
8. Marking Technology: Direct Laser Marking Technology. For traceability and maintenance scheduling we have developed a method for permanent distinct contrast marking on glass without engraving or using chemicals. Advanced laser system is capable of generating a 2D bar code directly on the glass surface.